onsemi launched its GaNEXUS gallium nitride power portfolio on June 9, 2026, with initial sampling of 40V to 650V FETs and integrated 650V Smart GaN FETs for AI data centers, industrial automation, and energy infrastructure.
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onsemi launches GaNEXUS GaN portfolio targeting $9B power chip market
onsemi's new GaNEXUS gallium nitride power portfolio shrinks magnetics by as much as 60 percent and boosts power density by up to 2x compared with conventional silicon solutions, targeting a gallium nitride chip market that analysts project will exceed $9 billion by 2030.
"GaNEXUS is enabling new architectures for power system design," Antoine Jalabert, vice president of the GaN division at onsemi, said. "As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures."
The initial lineup includes GaNEXUS FETs spanning 40 volts to 650 volts, plus GaNEXUS Smart 650V devices with integrated protection features that simplify system integration. In low- and medium-voltage systems such as AI server 48-volt intermediate bus converters and battery backup units, the portfolio delivers 30 percent to 60 percent smaller magnetics, 1.5x to 2x higher power density, and efficiency gains of 0.5 percent to 2 percent depending on topology. For higher-voltage applications like AI power shelves and power-factor correction stages, onsemi claims up to 60 percent magnetics reduction and 0.5 percent to 1 percent efficiency improvements that compound meaningfully at data center scale.
The launch comes as AI data centers are projected to consume as much as 9 percent of US electricity generation by 2030, with power and cooling costs accounting for up to 40 percent of total data center operating expenses, according to industry estimates cited by onsemi. Every percentage point of efficiency gain in a 100-megawatt facility can translate into roughly $1 million in annual electricity savings, making GaN's switching-speed advantages economically significant at hyperscale.
GaNEXUS devices use thermally enhanced packages with industry-standard footprints — TOLL Bottom Cooling, TOLT Top Cooling, and dual-cooling 3.3-millimeter by 3.3-millimeter and 5-millimeter by 6-millimeter options — to support dual sourcing. When paired with onsemi's Treo Platform for integrated sensing, control, and power management, the portfolio enables complete system-level power solutions that reduce design complexity and accelerate qualification timelines.
Competitive Landscape Heats Up
onsemi enters a gallium nitride market already crowded with established players. Navitas Semiconductor, the industry leader in GaN power ICs, on June 8 announced its own UHV-TO-247-4-ISO package for 1,200-volt to 3,300-volt silicon carbide MOSFETs, targeting grid-tied power conversion and battery energy storage. Navitas claims its new package delivers module-like performance in a discrete form factor while eliminating the need for external high-voltage isolation.
Infineon Technologies and Texas Instruments have also invested heavily in GaN, with Infineon's CoolGaN portfolio spanning similar voltage ranges. The competitive pressure extends to the foundry level: TSMC, which manufactures GaN-on-silicon wafers for multiple chip companies, has expanded its GaN process offerings as demand from data center and automotive customers accelerates.
Research institutions are pushing the technology further. Fraunhofer IAF recently demonstrated a GaN-based power module for 800-volt bidirectional DC charging systems, achieving 3 kilowatts of power in an 8.3-liter, 5.7-kilogram off-board charger. The project, called GaN4EmoBiL, highlights GaN's potential in electric vehicle charging infrastructure, where efficiency and compactness directly affect adoption costs.
Investment Angle
onsemi shares trade at roughly 22 times forward earnings, a discount to the Philadelphia Semiconductor Index's 28x average, reflecting investor caution about the company's exposure to automotive and industrial end markets. The GaNEXUS launch diversifies onsemi's revenue into faster-growing AI data center power delivery, where the company already competes with its EliteSiC silicon carbide portfolio. If GaNEXUS captures even 5 percent of the projected $9 billion GaN power market by 2030, it would represent roughly $450 million in incremental revenue — equivalent to about 4 percent of onsemi's trailing twelve-month sales. The company did not disclose pricing or initial customer wins for GaNEXUS.
This article is for informational purposes only and does not constitute investment advice.
[1] onsemi Introduces GaNEXUS Gallium Nitride Power Portfolio[2] Onsemi launches Elite Pairing Studio to simplify power design[3] Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management[4] GaN power electronics for bidirectional, single-phase DC electric vehicle charging
